 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| PRELIMINARY Notice : This is not a final specification Some parametric limits are subject to change. MITSUBISHI SEMICONDUCTOR MGFC5214 Q-Band 2-Stage Power Amplifier DESCRIPTION The MGFC5214 is a GaAs MMIC chip especially designed for 37.0 ~ 40.0 GHz band High Power Amplifier (HPA) . BLOCK DIAGRAM GND Vg1 Vd1 Vg2 Vd2 FEATURES RF frequency : 37.0 to 43.0 GHz Linear gain : 12 dB (TYP.)@ 37 to 40 GHz 10 dB(TYP.) @ 40 to 43 GHz P1dB : 23 dBm(min.) @ 37 to 40 GHz 23 dBm(target) @ 40 to 43 GHz RFin RFout GND (Vg1) Vd1 Vg2 Vd2 TARGET SPECIFICATIONS (Ta=25C) Parameter Frequeny Linear Gain P1dB Input VSWR Output VSWR Vd Vg Chip Size Parameter Frequeny Linear Gain P1dB Input VSWR Output VSWR Vd Vg Chip Size Vd1=4.5, Vd2=6 -0.2 1.99x1.60 (23) 2.2 2.3 V V mm2 Min. 40 10 Vd1=4.5, Vd2=6 -0.2 1.99x1.60 Typical Max. 43 23 2.0 2.0 V V mm2 Unit GHz dB dBm Min. 37 12 Typical Max. 40 Unit GHz dB dBm PHOTOGRAPH MITSUBISHI ELECTRIC as of July '98 PRELIMINARY Notice : This is not a final specification Some parametric limits are subject to change. MITSUBISHI SEMICONDUCTOR MGFC5214 Q-Band 2-Stage Power Amplifier DIE SIZE AND BOND PAD LOCATION(UNIT : M) X=1.99 mm Y=1.60 mm Bond Pad Dimension=0.07 x 0.15 mm2 (RF) 0.10 x 0.10 mm2 (DC) (680.0, 1470.0) (1555.0, 1470.0) (505.0, 1470.0) (1165.0, 1470.0) (125.0, 1470.0) (105.0, 800.0) (1885.0, 800.0) (125.0, 130.0) (0, 0) (505.0, 130.0) (1165.0, 130.0) (680.0, 130.0) (1555.0, 130.0) GND Vg1 Vd1 Vg2 Vd2 RFin RFout GND (Vg1) Vd1 Vg2 Vd2 MITSUBISHI ELECTRIC as of July '98 PRELIMINARY Notice : This is not a final specification Some parametric limits are subject to change. MITSUBISHI SEMICONDUCTOR MGFC5214 Q-Band 2-Stage Power Amplifier TYPICAL CHARACTERISTICS S-Parameter vs. Frequency 30 20 10 GAIN 0 -10 -20 -30 30 35 40 45 50 S22 S11 Measured Id1=180mA Id2=340mA Frequency (GHz) Output Power Performances 30 f=40GHz Measured 20 Id1=180mA Id2=340mA 20 30 10 10 0 -10 0 0 Pin (dBm) 10 20 MITSUBISHI ELECTRIC as of July '98 PRELIMINARY Notice : This is not a final specification Some parametric limits are subject to change. MITSUBISHI SEMICONDUCTOR MGFC5214 Q-Band 2-Stage Power Amplifier AN EXAMPLE OF TEST CIRCUIT Vg1 Vd1 Vg2 Vd2 GND Vg1 Vd1 Vg2 Vd2 RFi n RFou t GND (Vg1) Vd1 Vg2 Vd2 : Chip Capasitor ( 39 - 100 pF ) MITSUBISHI ELECTRIC as of July '98 |
Price & Availability of MGFC5214
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |